SI5458 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 6A CHIPFET
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Mounting Type | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 6 A | -55 °C | 150 °C | 325 pF | 9 nC | PowerPAK® ChipFET™ Single | PowerPAK® ChipFET™ Single | 4.5 V 10 V | 20 V | 3 V | N-Channel | 41 mOhm | Surface Mount | 3.5 W 10.4 W | MOSFET (Metal Oxide) | 30 V |