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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

STD12N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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ROHM RBR10NS40AFHTL
Discrete Semiconductor Products

STD12N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD12N60DM2AG
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]0 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]614 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)110 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs430 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.19
MouserN/A 1$ 2.87
10$ 2.00
100$ 1.43
500$ 1.16
1000$ 1.07
2500$ 0.98
NewarkEach (Supplied on Cut Tape) 1$ 3.67
10$ 2.57
25$ 2.36
50$ 2.16
100$ 1.95
250$ 1.82
500$ 1.68
1000$ 1.59

Description

General part information

STD12N60DM2AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.