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L6385ED
Integrated Circuits (ICs)

L6385ED

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STMicroelectronics

HV HIGH AND LOW SIDE DRIVER WITH EMBEDDED BOOTSTRAP DIODE

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DocumentsDS5450AN994+3
L6385ED
Integrated Circuits (ICs)

L6385ED

Active
STMicroelectronics

HV HIGH AND LOW SIDE DRIVER WITH EMBEDDED BOOTSTRAP DIODE

Deep-Dive with AI

DocumentsDS5450AN994+3

Technical Specifications

Parameters and characteristics for this part

SpecificationL6385ED
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]400 mA
Current - Peak Output (Source, Sink) [custom]650 mA
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeInverting
Logic Voltage - VIL, VIH [custom]1.5 V
Logic Voltage - VIL, VIH [custom]3.6 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ)50 ns, 30 ns
Supplier Device Package8-SOIC
Voltage - Supply17 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 245$ 2.71

Description

General part information

L6385E Series

The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half-bridge configurations.

The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.

The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.