Discrete Semiconductor Products
STD70R1K3S
ActiveSTMicroelectronics
N-CHANNEL 700 V, 1.3 OHM TYP., 5 A POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD70R1K3S
ActiveSTMicroelectronics
N-CHANNEL 700 V, 1.3 OHM TYP., 5 A POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD70R1K3S |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 175 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 77 W |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.25 | |
Description
General part information
STD70R1K3S Series
This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
Documents
Technical documentation and resources