Discrete Semiconductor Products

BAS21-HF

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DIODE GP 250V 400MA SOT23-3

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Discrete Semiconductor Products

Active

DIODE GP 250V 400MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS21-HF

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	250 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Package / Case	Operating Temperature - Junction	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Technology	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)
Comchip Technology BAS21C-HF	SC-59 SOT-23-3 TO-236-3	150 °C	50 ns	Surface Mount	1.25 V	100 nA	200 mA 500 ns	250 V	1 Pair Common Cathode	Standard	400 mA	SOT-23-3
Comchip Technology BAS21A-HF	SC-59 SOT-23-3 TO-236-3	150 °C	50 ns	Surface Mount	1.25 V	100 nA	200 mA 500 ns	250 V	1 Pair Common Anode	Standard	400 mA	SOT-23-3
Comchip Technology BAS21-HF	SC-59 SOT-23-3 TO-236-3	150 ¯C	50 ns	Surface Mount	1.25 V	100 nA	200 mA 500 ns	250 V		Standard		SOT-23-3	5 pF	400 mA

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General part information

Diode 250 V 400mA Surface Mount SOT-23-3

Technical documentation and resources

No documents available