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STP80NF10
Discrete Semiconductor Products

STP80NF10

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STMicroelectronics

N-CHANNEL 100V - 0.012OHM - 80A - TO-220 LOW GATE CHARGE STRIPFET(TM) MOSFET

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STP80NF10
Discrete Semiconductor Products

STP80NF10

Active
STMicroelectronics

N-CHANNEL 100V - 0.012OHM - 80A - TO-220 LOW GATE CHARGE STRIPFET(TM) MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP80NF10
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs182 nC
Input Capacitance (Ciss) (Max) @ Vds5500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs15 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 645$ 3.82

Description

General part information

STP80NF10 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Documents

Technical documentation and resources