Discrete Semiconductor Products

SI3447CDV-T1-GE3

Obsolete

MOSFET P-CH 12V 7.8A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 7.8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3447CDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7.8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 3 W
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI3447BDV-T1-GE3	-55 °C	150 °C	6-TSOP	8 V	Surface Mount	40 mOhm	SOT-23-6 Thin TSOT-23-6	12 V	1.1 W	14 nC	1 V	MOSFET (Metal Oxide)	1.8 V 4.5 V	4.5 A	P-Channel
Vishay General Semiconductor - Diodes Division SI3447CDV-T1-GE3	-55 °C	150 °C	6-TSOP	8 V	Surface Mount		SOT-23-6 Thin TSOT-23-6	12 V	2 W 3 W		1 V	MOSFET (Metal Oxide)	1.8 V 4.5 V	7.8 A	P-Channel	30 nC	910 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

Technical documentation and resources