SI3447 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 12V 4.5A 6TSOP
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 6-TSOP | 8 V | Surface Mount | 40 mOhm | SOT-23-6 Thin TSOT-23-6 | 12 V | 1.1 W | 14 nC | 1 V | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 4.5 A | P-Channel | ||
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 6-TSOP | 8 V | Surface Mount | SOT-23-6 Thin TSOT-23-6 | 12 V | 2 W 3 W | 1 V | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 7.8 A | P-Channel | 30 nC | 910 pF |