Discrete Semiconductor Products

SCTWA40N120G2V-4

LTB

STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDS13718 +26

Discrete Semiconductor Products

SCTWA40N120G2V-4

LTB

STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsDS13718 +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTWA40N120G2V-4

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1233 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Power Dissipation (Max)	277 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.9 V

SCTWA40N120G2V-4 Series

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)
STMicroelectronics SCTWA40N120G2V-4	18 V	TO-247-4	61 nC	1233 pF	MOSFET (Metal Oxide)	36 A	100 mOhm	TO-247-4	1.2 kV	-5 V 18 V	Through Hole	200 °C	-55 ░C	4.9 V	N-Channel	277 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 9.81
Newark	Each	1	$ 23.51
		10	$ 20.28
		25	$ 19.88
		50	$ 19.08
		100	$ 18.29
		250	$ 17.89

Description

General part information

SCTWA40N120G2V-4 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.