
Discrete Semiconductor Products
MSRTA20080AD
ActiveGeneSiC Semiconductor
DIODE MODULE GP 800V 200A 3TOWER
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Search across all available documentation for this part.
DocumentsMSRTA20080AD | Datasheet

Discrete Semiconductor Products
MSRTA20080AD
ActiveGeneSiC Semiconductor
DIODE MODULE GP 800V 200A 3TOWER
Deep-Dive with AI
DocumentsMSRTA20080AD | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MSRTA20080AD |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Diode Configuration | 1 Pair Series Connection |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed [Min] | 200 mA, 500 ns |
| Supplier Device Package | Three Tower |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 18 | $ 81.09 | |
| N/A | 0 | $ 118.63 | ||
| 20 | $ 94.90 | |||
Description
General part information
MSRTA200 Series
Diode Array 1 Pair Series Connection 800 V 200A Chassis Mount Three Tower
Documents
Technical documentation and resources