MSRTA200 Series

Catalog

DIODE MODULE GP 1200V 200A

Part	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Technology	Supplier Device Package
GeneSiC Semiconductor MSRTA200120D	10 µA	Module	1.1 V	Chassis Mount	-55 °C	150 °C	1.2 kV	200 mA 500 ns	200 A	1 Pair Series Connection	Standard
GeneSiC Semiconductor MSRTA200100AD	10 çA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C	1000 V	200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower
GeneSiC Semiconductor MSRTA20060AD	10 µA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C	600 V	200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower
GeneSiC Semiconductor MSRTA200160AD	10 µA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C		200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower
GeneSiC Semiconductor MSRTA200120AD	10 µA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C	1.2 kV	200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower
GeneSiC Semiconductor MSRTA200140AD	10 µA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C	1400 V	200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower
GeneSiC Semiconductor MSRTA20080AD	10 µA	Three Tower	1.1 V	Chassis Mount	-55 °C	150 °C	800 V	200 mA 500 ns	200 A	1 Pair Series Connection	Standard	Three Tower