Zenode.ai Logo
Beta
8-SOIC
Integrated Circuits (ICs)

TLC251CPSR

Obsolete
Texas Instruments

IC OPAMP GP 1 CIRCUIT 8SO

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
8-SOIC
Integrated Circuits (ICs)

TLC251CPSR

Obsolete
Texas Instruments

IC OPAMP GP 1 CIRCUIT 8SO

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTLC251CPSR
Amplifier TypeGeneral Purpose
Current - Input Bias0.7 pA
Current - Supply950 µA
Gain Bandwidth Product2.2 MHz
Mounting TypeSurface Mount
Number of Circuits1
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.209 "
Package / Case [y]5.3 mm
Slew Rate5.3 V/µs
Supplier Device Package8-SO
Voltage - Input Offset1.1 mV
Voltage - Supply Span (Max) [Max]16 V
Voltage - Supply Span (Min) [Min]1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TLC251B Series

The TLC251C, TLC251AC, and TLC251BC are low-cost, low-power programmable operational amplifiers designed to operate with single or dual supplies. Unlike traditional metal-gate CMOS operational amplifiers, these devices utilize Texas Instruments silicon-gate LinCMOSTMprocess, giving them stable input offset voltages without sacrificing the advantages of metal-gate CMOS.

This series of parts is available in selected grades of input offset voltage and can be nulled with one external potentiometer. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the application. The series features operation down to a 1.4-V supply and is stable at unity gain.

These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the device parametric performance.

Documents

Technical documentation and resources