Discrete Semiconductor Products

AOTF4126

NRND

MOSFET N-CH 100V 6A/27A TO220-3F

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 6A/27A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF4126

Current - Continuous Drain (Id) @ 25°C	6 A, 27 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	42 W, 2.1 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOTF4185	TO-220FL	P-Channel	2550 pF	4.5 V 10 V	20 V	175 °C	-55 °C	2.5 V	Through Hole	34 A	33 W	40 V	55 nC	MOSFET (Metal Oxide)	16 mOhm	TO-220-3 Full Pack
Alpha & Omega Semiconductor Inc. AOTF4126	TO-220F	N-Channel		7 V 10 V	25 V	175 °C	-55 °C	4 V	Through Hole	6 A 27 A	2.1 W 42 W	100 V	42 nC	MOSFET (Metal Oxide)	24 mOhm	TO-220-3 Full Pack	2200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly