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STMICROELECTRONICS STW20N95DK5
Discrete Semiconductor Products

STW43N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN TO-247 PACKAGE

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STMICROELECTRONICS STW20N95DK5
Discrete Semiconductor Products

STW43N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN TO-247 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW43N60DM2
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds2500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs93 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 530$ 7.60
NewarkEach 1$ 7.29
10$ 7.28
25$ 5.31

Description

General part information

STW43N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.