Discrete Semiconductor Products

SI4425FDY-T1-GE3

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MOSFET P-CH 30V 12.7/18.3A 8SOIC

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Discrete Semiconductor Products

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MOSFET P-CH 30V 12.7/18.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4425FDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12.7 A, 18.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.3 W, 4.8 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]
Vishay General Semiconductor - Diodes Division SI4425BDY-T1-E3	12 mOhm	8.8 A	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	3 V	1.5 W	100 nC	20 V	30 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SOIC	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SI4425FDY-T1-GE3	9.5 mOhm	12.7 A 18.3 A	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel		2.3 W 4.8 W	41 nC		30 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SOIC	4.5 V 10 V	16 V	-20 V	1620 pF	2.2 V

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General part information

P-Channel 30 V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources