SI4425 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.8A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SOP-8
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Vgs (Max) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 12 mOhm | 8.8 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | P-Channel | 3 V | 1.5 W | 100 nC | 20 V | 30 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 8-SOIC | 4.5 V 10 V | ||||
Vishay General Semiconductor - Diodes Division | 9.5 mOhm | 12.7 A 18.3 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | P-Channel | 2.3 W 4.8 W | 41 nC | 30 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 8-SOIC | 4.5 V 10 V | 16 V | -20 V | 1620 pF | 2.2 V |