Discrete Semiconductor Products
STD95P3LLH6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE P-CHANNEL -30 V, 5 MOHM TYP., -80 A, STRIPFET H6 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD95P3LLH6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE P-CHANNEL -30 V, 5 MOHM TYP., -80 A, STRIPFET H6 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD95P3LLH6AG |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 113 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 104 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6.9 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 18 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD95P3LLH6AG Series
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources