LN100LA-G

Obsolete

MOSFET 2N-CH 1200V 6LFGA

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 1200V 6LFGA

Technical Specifications

Parameters and characteristics for this part

Specification	LN100LA-G

Configuration	2 N-Channel (Cascoded)
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-25 °C
Package / Case	6-VFLGA
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	3000 Ohm
Supplier Device Package	6-LFGA (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.6 V

Part	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type
Microchip Technology LN100LA-G	350 mW	6-LFGA (3x3)	1.6 V	6-VFLGA	MOSFET (Metal Oxide)	-25 °C	125 °C	1200 V	1.2 kV	50 pF	2 N-Channel (Cascoded)	3000 Ohm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 350mW Surface Mount 6-LFGA (3x3)

Technical documentation and resources