Discrete Semiconductor Products

CPH3356-TL-H

Obsolete

ON Semiconductor

SINGLE P-CHANNEL POWER MOSFET, -20V, -2.5A, 137MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-318BA-CPH3

Discrete Semiconductor Products

CPH3356-TL-H

Obsolete

ON Semiconductor

SINGLE P-CHANNEL POWER MOSFET, -20V, -2.5A, 137MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-318BA-CPH3

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CPH3356-TL-H

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.3 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	137 mOhm
Supplier Device Package	3-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

CPH3356 Series

Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor CPH3356-TL-W	SC-59 SOT-23-3 TO-236-3	250 pF	P-Channel	1.4 V	Surface Mount	MOSFET (Metal Oxide)	1 W	20 V	2.5 A	3.3 nC	137 mOhm	3-CPH	10 V	150 °C	1.8 V 4.5 V
ON Semiconductor CPH3356-TL-H	SC-59 SOT-23-3 TO-236-3	250 pF	P-Channel		Surface Mount	MOSFET (Metal Oxide)	1 W	20 V	2.5 A	3.3 nC	137 mOhm	3-CPH	10 V	150 °C	1.8 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

CPH3356 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.