CPH3356 Series

Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

Catalog

Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor CPH3356-TL-W	SC-59 SOT-23-3 TO-236-3	250 pF	P-Channel	1.4 V	Surface Mount	MOSFET (Metal Oxide)	1 W	20 V	2.5 A	3.3 nC	137 mOhm	3-CPH	10 V	150 °C	1.8 V 4.5 V
ON Semiconductor CPH3356-TL-H	SC-59 SOT-23-3 TO-236-3	250 pF	P-Channel		Surface Mount	MOSFET (Metal Oxide)	1 W	20 V	2.5 A	3.3 nC	137 mOhm	3-CPH	10 V	150 °C	1.8 V 4.5 V

Catalog

Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

Key Features

• 1.8V Drive

• Low On-Resistance

• ESD Diode - Protected Gate

• RoHS Compliance

Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.