Specification	STH270N8F7-2

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	193 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), Variant
Power Dissipation (Max)	315 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	H2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STH270N8F7-2 Series

N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology
STMicroelectronics STH270N8F7-2	315 W	13600 pF	TO-263-3 D2PAK (2 Leads + Tab) Variant	193 nC	Surface Mount	180 A	2.1 mOhm	10 V	H2PAK	175 °C	-55 °C	20 V	4 V	N-Channel	80 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	297	$ 5.04
Newark	Each (Supplied on Cut Tape)	1	$ 7.07
		10	$ 5.22
		25	$ 4.86
		50	$ 4.51
		100	$ 4.15
		250	$ 4.05
		500	$ 3.95
		1000	$ 3.94

Description

General part information

STH270N8F7-2 Series

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.