Discrete Semiconductor Products

SIHU2N80E-GE3

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MOSFET N-CH 800V 2.8A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 2.8A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU2N80E-GE3

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.6 nC
Input Capacitance (Ciss) (Max) @ Vds	315 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	2.75 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHU2N80AE-GE3	IPAK TO-251-3 Short Leads TO-251AA	10.5 nC	2.9 Ohm	Through Hole	TO-251AA	N-Channel	MOSFET (Metal Oxide)	800 V	30 V	62.5 W	4 V	10 V	2.9 A	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHU2N80E-GE3	IPAK TO-251-3 Short Leads TO-251AA	19.6 nC	2.75 Ohm	Through Hole	TO-251AA	N-Channel	MOSFET (Metal Oxide)	800 V	30 V	62.5 W	4 V	10 V	2.8 A	-55 °C	150 °C	315 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 0.63

General part information

N-Channel 800 V 2.8A (Tc) 62.5W (Tc) Through Hole TO-251AA

Technical documentation and resources