SIHU2 Series

Catalog

MOSFET N-CH 800V 2.9A TO251AA

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHU2N80AE-GE3	IPAK TO-251-3 Short Leads TO-251AA	10.5 nC	2.9 Ohm	Through Hole	TO-251AA	N-Channel	MOSFET (Metal Oxide)	800 V	30 V	62.5 W	4 V	10 V	2.9 A	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHU2N80E-GE3	IPAK TO-251-3 Short Leads TO-251AA	19.6 nC	2.75 Ohm	Through Hole	TO-251AA	N-Channel	MOSFET (Metal Oxide)	800 V	30 V	62.5 W	4 V	10 V	2.8 A	-55 °C	150 °C	315 pF