STB35N60DM2
ActiveMOSFETS N-CHANNEL 600 V, 0.094 OHM TYP 28 A MDMESH DM2 POWER MOSFETS IN D2PAK PACKAGE
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STB35N60DM2
ActiveMOSFETS N-CHANNEL 600 V, 0.094 OHM TYP 28 A MDMESH DM2 POWER MOSFETS IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB35N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 210 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
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Description
General part information
STB35N60DM2 Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources