Discrete Semiconductor Products

1N5821RL

Obsolete

DIODE SCHOTTKY 30V 3A DO201AD

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Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 30V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5821RL

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	DO-201AD, Axial
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	500 mV

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
STMicroelectronics 1N5821	200 mA 500 ns	30 V	Schottky	500 mV	DO-201AD	DO-201AD Axial	2 mA	Through Hole	3 A	150 °C
STMicroelectronics 1N5820	200 mA 500 ns	20 V	Schottky		DO-201AD	DO-201AD Axial	2 mA	Through Hole	3 A	150 °C	475 mV
STMicroelectronics 1N5820RL	200 mA 500 ns	20 V	Schottky		DO-201AD	DO-201AD Axial	2 mA	Through Hole	3 A	150 °C	475 mV
STMicroelectronics 1N5821RL	200 mA 500 ns	30 V	Schottky	500 mV	DO-201AD	DO-201AD Axial	2 mA	Through Hole	3 A	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 3A Through Hole DO-201AD

Technical documentation and resources