Discrete Semiconductor Products

STB4N62K3

Obsolete

MOSFET N-CH 620V 3.8A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 620V 3.8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB4N62K3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	1.95 Ohm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology
STMicroelectronics STB4N62K3	10 V	450 pF	1.95 Ohm	70 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	30 V	3.8 A	Surface Mount	4.5 V	D2PAK	620 V	N-Channel	14 nC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 620 V 3.8A (Tc) 70W (Tc) Surface Mount D2PAK

Technical documentation and resources