Discrete Semiconductor Products

STP4N62K3

Obsolete

MOSFET N-CH 620V 3.8A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 620V 3.8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STP4N62K3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	1.95 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STP4NB50	N-Channel	3.8 A	400 pF	30 V	500 V	MOSFET (Metal Oxide)	TO-220-3	10 V	Through Hole	TO-220	21 nC	4 V	150 °C	2.8 Ohm	80 W
STMicroelectronics STP4NK50ZD	N-Channel	3 A	310 pF	30 V	500 V	MOSFET (Metal Oxide)	TO-220-3	10 V	Through Hole	TO-220		4.5 V		2.7 Ohm		45 W	150 °C	-55 °C	12 nC
STMicroelectronics STP4N62K3	N-Channel	3.8 A	450 pF	30 V	620 V	MOSFET (Metal Oxide)	TO-220-3	10 V	Through Hole	TO-220	14 nC	4.5 V	150 °C	1.95 Ohm	70 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.59

General part information

N-Channel 620 V 3.8A (Tc) 70W (Tc) Through Hole TO-220

Technical documentation and resources