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STP70NS04ZC
Discrete Semiconductor Products

STP70NS04ZC

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STMicroelectronics

N-CHANNEL CLAMPED 5 MOHM TYP., 80 A IN TO-220 PACKAGE

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DocumentsAN4390+12
STP70NS04ZC
Discrete Semiconductor Products

STP70NS04ZC

Active
STMicroelectronics

N-CHANNEL CLAMPED 5 MOHM TYP., 80 A IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsAN4390+12

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP70NS04ZC
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1930 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)180 W
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

STP70NS04ZC Series

This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.