Discrete Semiconductor Products

SISHA04DN-T1-GE3

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MOSFET N-CH 30V 30.9A/40A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 30.9A/40A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISHA04DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	40 A, 30.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	3595 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	2.15 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SISHA04DN-T1-GE3	30 V	PowerPAK® 1212-8SH	MOSFET (Metal Oxide)	2.2 V	-16 V 20 V	Surface Mount	3.7 W 52 W	4.5 V 10 V	PowerPAK® 1212-8SH	2.15 mOhm	N-Channel	77 nC	3595 pF	30.9 A 40 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 30.9A (Ta), 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources