SISHA04 Series

Catalog

MOSFET N-CH 30V 30.9A/40A PPAK

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SISHA04DN-T1-GE3	30 V	PowerPAK® 1212-8SH	MOSFET (Metal Oxide)	2.2 V	-16 V 20 V	Surface Mount	3.7 W 52 W	4.5 V 10 V	PowerPAK® 1212-8SH	2.15 mOhm	N-Channel	77 nC	3595 pF	30.9 A 40 A	-55 °C	150 °C