Discrete Semiconductor Products

SIHJ7N65E-T1-GE3

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MOSFET N-CH 650V 7.9A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 650V 7.9A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHJ7N65E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7.9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	598 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHJ7N65E-T1-GE3	96 W	598 mOhm	820 pF	N-Channel	650 V	Surface Mount	7.9 A	MOSFET (Metal Oxide)	10 V	30 V	PowerPAK® SO-8	4 V	44 nC	-55 °C	150 °C	PowerPAK® SO-8

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General part information

N-Channel 650 V 7.9A (Tc) 96W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources