SIHJ7 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 650V 7.9A PPAK SO-8
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 96 W | 598 mOhm | 820 pF | N-Channel | 650 V | Surface Mount | 7.9 A | MOSFET (Metal Oxide) | 10 V | 30 V | PowerPAK® SO-8 | 4 V | 44 nC | -55 °C | 150 °C | PowerPAK® SO-8 |