Discrete Semiconductor Products

SI3456DDV-T1-GE3

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MOSFET N-CH 30V 6.3A 6TSOP

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Discrete Semiconductor Products

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MOSFET N-CH 30V 6.3A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3456DDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.7 W, 2.7 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI3456DDV-T1-GE3	SOT-23-6 Thin TSOT-23-6	6.3 A	3 V	Surface Mount	20 V	N-Channel	MOSFET (Metal Oxide)	30 V	4.5 V 10 V	40 mOhm	-55 °C	150 °C	9 nC	325 pF	6-TSOP	1.7 W 2.7 W
Vishay General Semiconductor - Diodes Division SI3456BDV-T1-GE3	SOT-23-6 Thin TSOT-23-6	4.5 A	3 V	Surface Mount	20 V	N-Channel	MOSFET (Metal Oxide)	30 V	4.5 V 10 V		-55 °C	150 °C	13 nC		6-TSOP	1.1 W	35 mOhm

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General part information

N-Channel 30 V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP

Technical documentation and resources