SI3456 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 6.3A 6TSOP
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | FET Type | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | SOT-23-6 Thin TSOT-23-6 | 6.3 A | 3 V | Surface Mount | 20 V | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5 V 10 V | 40 mOhm | -55 °C | 150 °C | 9 nC | 325 pF | 6-TSOP | 1.7 W 2.7 W | |
Vishay General Semiconductor - Diodes Division | SOT-23-6 Thin TSOT-23-6 | 4.5 A | 3 V | Surface Mount | 20 V | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.5 V 10 V | -55 °C | 150 °C | 13 nC | 6-TSOP | 1.1 W | 35 mOhm |