The STM32F411xC/xE devices are based on the high-performance ARM Cortex -M4 32-bit RISC core operating at a frequency of up to 100 MHz. Its Cortex -M4 core features a Floating point unit (FPU) single precision which supports all ARM single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security.The STM32F411xC/xE belongs to the STM32 Dynamic Efficiency product line (with products combining power efficiency, performance and integration) while adding a new innovative feature called Batch Acquisition Mode (BAM) allowing to save even more power consumption during data batching.The STM32F411xC/xE incorporate high-speed embedded memories (up to 512 Kbytes of Flash memory, 128 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB bus and a 32-bit multi-AHB bus matrix.All devices offer one 12-bit ADC, a low-power RTC, six general-purpose 16-bit timers including one PWM timer for motor control, two general-purpose 32-bit timers. They also feature standard and advanced communication interfaces.Dynamic Efficiency Line with BAM (Batch Acquisition Mode)Core: ARM® 32-bit Cortex® -M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructionsMemoriesup to 512 Kbytes of Flash memory128 Kbytes of SRAMClock, reset and supply management1.7 V to 3.6 V application supply and I/OsPOR, PDR, PVD and BOR4-to-26 MHz crystal oscillatorInternal 16 MHz factory-trimmed RC32 kHz oscillator for RTC with calibrationInternal 32 kHz RC with calibrationPower consumptionRun: 100 µA/MHz (peripheral off)Stop (Flash in Stop mode, fast wakeup time): 42 µA Typ @ 25C; 65 µA max @25 °CStop (Flash in Deep power down mode, fast wakeup time): down to 10 µA @ 25 °C; 30 µA max @25 °CStandby: 2.4 µA @