
Discrete Semiconductor Products
TSM250NB06LDCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFETS 60V, 29A, DUAL N-CHANNEL POWER MOSFET
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Discrete Semiconductor Products
TSM250NB06LDCR RLG
ActiveTaiwan Semiconductor Corporation
MOSFETS 60V, 29A, DUAL N-CHANNEL POWER MOSFET
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM250NB06LDCR RLG |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6 A, 29 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1314 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max | 48 W, 2 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | 8-PDFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TSM250 Series
Mosfet Array 60V 6A (Ta), 29A (Tc) 2W (Ta), 48W (Tc) Surface Mount 8-PDFN (5x6)
Documents
Technical documentation and resources