TSM250 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET 2N-CH 60V 7A/30A 8DFN
| Part | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Supplier Device Package | Power - Max | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature | Vgs (Max) | FET Type | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package [y] | Supplier Device Package [x] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1461 pF | 2 N-Channel (Dual) | 60 V | 7 A 30 A | 25 mOhm | 8-PowerTDFN | 8-PDFN (5x6) | 2 W 48 W | 4 V | Surface Mount | 150 °C | -55 °C | MOSFET (Metal Oxide) | 22 nC | ||||||||||||||
Taiwan Semiconductor Corporation | 535 pF | 20 V | 5.8 A | 25 mOhm | SC-59 SOT-23-3 TO-236-3 | SOT-23 | 800 mV | Surface Mount | MOSFET (Metal Oxide) | 7.7 nC | 1.56 W | 1.8 V | 4.5 V | 150 °C | 10 V | N-Channel | ||||||||||||
Taiwan Semiconductor Corporation | 775 pF | 2 N-Channel 2 N-Channel (Dual) | 20 V | 5.8 A | 25 mOhm | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 800 mV | Surface Mount | 150 °C | -55 °C | MOSFET (Metal Oxide) | 620 mW | 11 nC | ||||||||||||||
Taiwan Semiconductor Corporation | 60 V | 6 A 27 A | 8-PowerWDFN | 8-PDFN | 2.5 V | Surface Mount | 150 °C | -55 °C | MOSFET (Metal Oxide) | 23 nC | 20 V | N-Channel | 1307 pF | 3.1 | 3.15 | 25 mOhm | 4.5 V 10 V | 1.9 W 42 W | ||||||||||
Taiwan Semiconductor Corporation | 775 pF | 2 N-Channel (Dual) | 20 V | 5.8 A | 25 mOhm | 6-VDFN Exposed Pad | 6-TDFN (2x2) | 800 mV | Surface Mount | 150 °C | -55 °C | MOSFET (Metal Oxide) | 620 mW | 11 nC | ||||||||||||||
Taiwan Semiconductor Corporation | 1314 pF | 2 N-Channel (Dual) | 60 V | 6 A 29 A | 8-PowerTDFN | 8-PDFN (5x6) | 2 W 48 W | 2.5 V | Surface Mount | 150 °C | -55 °C | MOSFET (Metal Oxide) | 23 nC | 25 mOhm |