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GWA40MS120F4AG
Discrete Semiconductor Products

GWA40MS120F4AG

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STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 1200 V, 40 A, LOW-LOSS MS SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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DocumentsAN4929+9
GWA40MS120F4AG
Discrete Semiconductor Products

GWA40MS120F4AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP, 1200 V, 40 A, LOW-LOSS MS SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsAN4929+9

Technical Specifications

Parameters and characteristics for this part

SpecificationGWA40MS120F4AG
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)120 A
Gate Charge147 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]536 W
QualificationAEC-Q101
Supplier Device PackageTO-247 Long Leads
Switching Energy3.3 mJ, 1.5 mJ
Td (on/off) @ 25°C140 ns, 35 ns
Test Condition40 A, 600 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic [Max]2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.00

Description

General part information

GWA40MS120F4AG Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.