Discrete Semiconductor Products

CD645B

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DIODE GEN PURP 270V 400MA DIE

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Discrete Semiconductor Products

Active

DIODE GEN PURP 270V 400MA DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CD645B

Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	270 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io)	Technology	Speed	Speed
Microchip Technology CD645B	175 ░C	-65 C	270 V	Die	Surface Mount	50 µA	Die	400 mA	Standard	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	358	$ 2.29

General part information

Diode 270 V 400mA Surface Mount Die

Technical documentation and resources

No documents available