Discrete Semiconductor Products

SI8808DB-T2-E1

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MOSFET N-CH 30V 4MICROFOOT

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Discrete Semiconductor Products

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MOSFET N-CH 30V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8808DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-UFBGA
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	4-Microfoot
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI8808DB-T2-E1	330 pF	95 mOhm	8 V	30 V	Surface Mount	MOSFET (Metal Oxide)	N-Channel	4-UFBGA	1.8 A	900 mV	-55 °C	150 °C	500 mW	4-Microfoot	1.5 V 4.5 V	10 nC

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General part information

N-Channel 30 V 1.8A (Ta) 500mW (Ta) Surface Mount 4-Microfoot

Technical documentation and resources