SI8808 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 4MICROFOOT
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Technology | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 330 pF | 95 mOhm | 8 V | 30 V | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 4-UFBGA | 1.8 A | 900 mV | -55 °C | 150 °C | 500 mW | 4-Microfoot | 1.5 V 4.5 V | 10 nC |