Discrete Semiconductor Products

SI4532ADY-T1-E3

Obsolete

MOSFET N/P-CH 30V 3.7A/3A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 3.7A/3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4532ADY-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.7 A, 3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	16 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	1.2 W, 1.13 W
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI4532ADY-T1-E3	53 mOhm	1.13 W 1.2 W	-55 °C	150 °C	Surface Mount	30 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	N and P-Channel	Logic Level Gate	16 nC	3 A 3.7 A	8-SOIC	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.7A, 3A 1.13W, 1.2W Surface Mount 8-SOIC

Technical documentation and resources