SI4532 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N/P-CH 30V 3.7A/3A 8SOIC
| Part | Rds On (Max) @ Id, Vgs | Power - Max | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 53 mOhm | 1.13 W 1.2 W | -55 °C | 150 °C | Surface Mount | 30 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | N and P-Channel | Logic Level Gate | 16 nC | 3 A 3.7 A | 8-SOIC | 1 V |