Discrete Semiconductor Products

IRLZ44SPBF

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MOSFET N-CH 60V 50A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRLZ44SPBF

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W, 3.7 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	FET Type	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRLZ44STRRPBF	50 A	4 V 5 V	3300 pF	TO-263 (D2PAK)	10 V	-55 °C	175 ░C	2 V	60 V	3.7 W 150 W	MOSFET (Metal Oxide)	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	66 nC	28 mOhm
Vishay General Semiconductor - Diodes Division IRLZ44PBF	50 A	4 V 5 V	3300 pF	TO-220AB	10 V	-55 °C	175 ░C	2 V	60 V	150 W	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-220-3	66 nC	28 mOhm
Vishay General Semiconductor - Diodes Division IRLZ44S	50 A	4 V 5 V	3300 pF	TO-263 (D2PAK)	10 V	-55 °C	175 ░C	2 V	60 V	3.7 W 150 W	MOSFET (Metal Oxide)	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	66 nC	28 mOhm
Vishay General Semiconductor - Diodes Division IRLZ44STRR	50 A	4 V 5 V	3300 pF	TO-263 (D2PAK)	10 V	-55 °C	175 ░C	2 V	60 V	3.7 W 150 W	MOSFET (Metal Oxide)	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	66 nC	28 mOhm
Vishay General Semiconductor - Diodes Division IRLZ44SPBF	50 A	4 V 5 V	3300 pF	TO-263 (D2PAK)	10 V	-55 °C	175 ░C	2 V	60 V	3.7 W 150 W	MOSFET (Metal Oxide)	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	66 nC	28 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 50A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources