IRLZ44 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 50A D2PAK
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | FET Type | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 50 A | 4 V 5 V | 3300 pF | TO-263 (D2PAK) | 10 V | -55 °C | 175 ░C | 2 V | 60 V | 3.7 W 150 W | MOSFET (Metal Oxide) | N-Channel | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 66 nC | 28 mOhm |
Vishay General Semiconductor - Diodes Division | 50 A | 4 V 5 V | 3300 pF | TO-220AB | 10 V | -55 °C | 175 ░C | 2 V | 60 V | 150 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | TO-220-3 | 66 nC | 28 mOhm |
Vishay General Semiconductor - Diodes Division | 50 A | 4 V 5 V | 3300 pF | TO-263 (D2PAK) | 10 V | -55 °C | 175 ░C | 2 V | 60 V | 3.7 W 150 W | MOSFET (Metal Oxide) | N-Channel | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 66 nC | 28 mOhm |
Vishay General Semiconductor - Diodes Division | 50 A | 4 V 5 V | 3300 pF | TO-263 (D2PAK) | 10 V | -55 °C | 175 ░C | 2 V | 60 V | 3.7 W 150 W | MOSFET (Metal Oxide) | N-Channel | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 66 nC | 28 mOhm |
Vishay General Semiconductor - Diodes Division | 50 A | 4 V 5 V | 3300 pF | TO-263 (D2PAK) | 10 V | -55 °C | 175 ░C | 2 V | 60 V | 3.7 W 150 W | MOSFET (Metal Oxide) | N-Channel | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 66 nC | 28 mOhm |