Discrete Semiconductor Products

SIRA12BDP-T1-GE3

Active

MOSFET N-CH 30V 27A/60A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 27A/60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA12BDP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A, 27 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 38 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	FET Type	Technology	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIRA12BDP-T1-GE3	-55 °C	150 °C	27 A 60 A	2.4 V	32 nC	-16 V 20 V	4.5 V 10 V	5 W 38 W	PowerPAK® SO-8	N-Channel	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® SO-8	30 V	4.3 mOhm	1470 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources