SIRA12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 27A/60A PPAK SO8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Supplier Device Package | FET Type | Technology | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 27 A 60 A | 2.4 V | 32 nC | -16 V 20 V | 4.5 V 10 V | 5 W 38 W | PowerPAK® SO-8 | N-Channel | MOSFET (Metal Oxide) | Surface Mount | PowerPAK® SO-8 | 30 V | 4.3 mOhm | 1470 pF |