Discrete Semiconductor Products

SIZ300DT-T1-GE3

LTB

MOSFET 2N-CH 30V 11A 8PWRPAIR

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 30V 11A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ300DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C [Max]	28 A
Current - Continuous Drain (Id) @ 25°C [Min]	11 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	16.7 W, 31 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-PowerPair®
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Power - Max	Configuration	Package / Case	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ300DT-T1-GE3	MOSFET (Metal Oxide)	30 V	12 nC	24 mOhm	2.4 V	28 A	11 A	16.7 W 31 W	2 N-Channel (Half Bridge)	8-PowerWDFN	Logic Level Gate	Surface Mount	400 pF	8-PowerPair®	-55 °C	150 °C

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General part information

Mosfet Array 30V 11A, 28A 16.7W, 31W Surface Mount 8-PowerPair®

Technical documentation and resources