SIZ300 Series

Catalog

MOSFET 2N-CH 30V 11A 8PWRPAIR

Part	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Power - Max	Configuration	Package / Case	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ300DT-T1-GE3	MOSFET (Metal Oxide)	30 V	12 nC	24 mOhm	2.4 V	28 A	11 A	16.7 W 31 W	2 N-Channel (Half Bridge)	8-PowerWDFN	Logic Level Gate	Surface Mount	400 pF	8-PowerPair®	-55 °C	150 °C