Discrete Semiconductor Products

SI4835DDY-T1-E3

Active

MOSFET P-CH 30V 13A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 13A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4835DDY-T1-E3

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.6 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4835DDY-T1-E3	-55 °C	150 °C	2.5 W 5.6 W	65 nC	30 V	1960 pF	8-SOIC	4.5 V 10 V	3 V	8-SOIC	3.9 mm	0.154 in	25 V	13 A	P-Channel	Surface Mount	MOSFET (Metal Oxide)	18 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

Technical documentation and resources